"**SI2367DS-T1-GE3-VB Detailed parameter description: **br - **Brand: **VBsemibr - **Model: **SI2367DS-T1-GE3-VBbr - **Silkscreen: **VB2355br - **Package: **SOT23br br **Electrical parameters: **br - **Channel type: **P-Channelbr - **Maximum leakage current: **-5.6Abr - **Drain-source voltage: **-30Vbr - **On-resistance (RDS(ON)): **47mΩ @ VGS=10V, VGS=20Vbr - **Threshold voltage (Vth): **-1Vbr br **Packaging information: **br - **Package type: **SOT23br br **Application introduction: **br SI2367DS-T1-GE3-VB is a P-Channel power field effect transistor launched by VBsemi brand. It has excellent electrical performance and is suitable for a variety of electronic application scenarios. br br **Main application areas: **br 1. **Power module: ** Suitable for power switching circuits in power modules, which can be used to design compact and high-efficiency power solutions. br br 2. **Power management: ** In the field of power management, it can be applied to power management circuits such as switching regulators and DC-DC converters. br br 3. **Communication equipment: ** Due to its characteristics, it can be used as a power switching element in communication equipment for signal amplification and power supply regulation. br br 4. **Industrial control: ** In industrial control systems, it can be used for motor drives, switching power supplies and other high-performance power control applications. br br **Note: ** Before use, please read the relevant data sheets and specifications carefully to ensure the suitability of the product in a specific application.