"**UT7401G-AE3-R-VB Detailed parameter description:**br br br br - **Package:** SOT23br - **Channel type:** P—Channelbr - **Maximum drain voltage:** -30Vbr - **Maximum drain current:** -5.6Abr - **On-resistance (RDS(ON)):** 47mΩ @ VGS=10V, VGS=20Vbr - **Threshold voltage (Vth):** -1Vbr br **Application introduction:**br br UT7401G-AE3-R-VB is a P—Channel trench power MOSFET with excellent performance and versatile applications. br br **Main Features:**br - **High Performance:** Low on-resistance and high drain current for high performance circuit design. br - **Low Threshold Voltage:** Threshold voltage of -1V facilitates flexible circuit design under low voltage conditions. br - **Compact Package:** SOT23 package for space-constrained applications. br br **Application Areas:**br 1. **Power Management Module:**br - Used to build efficient and compact power management modules that provide reliable power conversion and regulation. br br 2. **Drive Circuit:**br - As part of the driver or switch in the circuit, to achieve fast and reliable circuit switching. br br 3. **Motor Drive:**br - Suitable for motor control and drive modules to provide precise control of the motor. br br 4. **Battery Protection:**br - In the battery management circuit, used to implement over-current and over-voltage protection. br br 5. **LED Driver:**br - Used in LED driver circuits to ensure stable brightness and efficiency. br br Please select UT7401G-AE3-R-VB to achieve the best performance based on specific application needs and circuit design requirements.