Official Website： #Chipbr "**AP2329GN-VB**br br br br - **Brand:** VBsemibr - **Parameters:**br - Package: SOT23br - Polarity: P-Channelbr - Rated voltage: -30Vbr - Rated current: -5.6Abr - Switch resistance: RDS(ON)=47mΩ@VGS=10V,VGS=20Vbr - Threshold voltage: Vth=-1Vbr br **Detailed parameter description:**br AP2329GN-VB is a P-Channel field effect transistor launched by VBsemi, using SOT23 package. It has a rated voltage of -30V, a rated current of -5.6A, a low switch resistance RDS(ON) of 47mΩ@VGS=10V and VGS=20V, and a threshold voltage Vth of -1V. Applicable to various electronic design needs. br br **Application introduction: **br AP2329GN-VB is widely used in the electronic field, especially suitable for: br - **Power management module: ** In the power management circuit, AP2329GN-VB can be used to achieve efficient power switch control and provide reliable current and voltage regulation. br - **Power inverter: ** Due to its superior voltage and current characteristics, AP2329GN-VB can be used in power inverters to improve the energy efficiency and performance of the system. br - **Drive circuit: ** As a P-Channel field effect transistor, it is suitable for various drive circuits and can provide high-efficiency drive under low voltage and low power consumption conditions. br br **Field application: **br 1. **Consumer electronics: ** Such as power management modules of electronic devices such as mobile phones and tablets. br 2. **Industrial electronics: ** Used to drive industrial electronic devices such as motors and inverters. br 3. **Communication equipment: ** Used in power amplification and signal processing modules. br br AP2329GN-VB is a high performance P-Channel field effect transistor that provides reliable solutions for various electronic applications.