Official Website： #Chipbr "**VBsemi KD2319SRG-VB**br br - **Parameter Description:**br - Package Type: SOT23br - Channel Type: P—Channelbr - Maximum Withstand Voltage: -30Vbr - Maximum Current: -5.6Abr - Turn-on Voltage (Gate-source Voltage): Vth=-1Vbr - Turn-on Resistance: RDS(ON)=47mΩ @ VGS=10V, VGS=20Vbr br - **Application Introduction:**br - **SOT23 Package:** Small, suitable for electronic applications in compact spaces. br - **P—Channel Design:** Suitable for circuits requiring P-type field effect transistors. br - **Low Voltage, High Current:** Suitable for low voltage power supplies and power management applications requiring higher currents. br - **Low Turn-on Resistance:** Provides lower on-resistance, suitable for circuits requiring high efficiency. br br - **Field and module applications:**br - **Power management module:** Due to its P-Channel design and large current capability, it can be used in low-voltage power management modules. br - **Power amplifier:** Suitable for power amplifier circuits that require P-type field effect transistors. br - **DC-DC converter:** Used to build high-efficiency, low-voltage DC-DC converters. br - **Current control applications:** Due to its low on-resistance, it can be used in current control circuits. br br This VBsemi KD2319SRG-VB field effect transistor is suitable for a variety of power management and power control applications, especially for scenarios with high requirements for low voltage and high current.