Official Website： #Chipbr "MVGSF1N02LT1G-VB br Brand: VBsemibr br **Detailed parameter description:**br - Package type: SOT23br - Channel type: N-Channelbr - Maximum drain voltage: 30Vbr - Maximum drain current: 6.5Abr - Static drain-source resistance (RDS(ON)): 30mΩ @ VGS=10V, VGS=20Vbr - Gate threshold voltage (Vth): 1.2~2.2Vbr br **Application introduction:**br MVGSF1N02LT1G-VB is an N-Channel field effect transistor (FET) in SOT23 package. Its design focuses on providing low drain resistance and high drain current, suitable for a variety of electronic application scenarios. br br **Application Areas:**br 1. **Power Management Module:** The MVGSF1N02LT1G-VB can be used in power management modules to improve power efficiency by effectively controlling power output. br br 2. **Current Control Module:** Suitable for circuits that require effective control of current, such as current sources, current control modules, etc. br br 3. **Switching Power Supply:** In switching power supplies, the MVGSF1N02LT1G-VB can be used to control the flow of current, helping to achieve efficient energy conversion. br br 4. **Battery Management System:** Due to its low resistance and high current capability, it can be used in battery management systems to help manage and control the battery charging and discharging process. br br 5. **Low Voltage Disconnect Switch:** Suitable for circuits that require a low voltage disconnect switch with a moderate gate threshold voltage. br br With these features, the MVGSF1N02LT1G-VB can be widely used in various electronic devices and modules that require N-Channel field-effect transistors, providing reliable and high-performance solutions for circuits.