Official Website： #Chipbr "**VBsemi UTD351G-AE3-R-VB**br br - **Parameter Description:**br - Package Type: SOT23br - Channel Type: N-Channelbr - Maximum Withstand Voltage: 30Vbr - Maximum Current: 6.5Abr - Turn-on Voltage (Gate-source Voltage): Vth=1.2~2.2Vbr - Turn-on Resistance: RDS(ON)=30mΩ @ VGS=10V, VGS=20Vbr br - **Application Introduction:**br - **SOT23 Package:** Small, suitable for electronic applications in compact spaces. br - **N-Channel Design:** Suitable for circuits requiring N-type field effect transistors. br - **Medium Voltage, High Current:** Suitable for power management applications requiring larger currents under medium voltage conditions. br - **Low on-resistance:** Provides lower on-resistance, which helps improve circuit performance. br br - **Fields and module applications:**br - **Power management module:** Due to its N-Channel design and large current capability, it can be used in medium voltage power management modules. br - **Motor drive:** Suitable for motor drive circuits that need to control large currents. br - **Power inverter:** Used to build medium power DC to AC power inverters. br - **LED drive:** Due to its low on-resistance, it can be used in LED drive circuits to improve efficiency. br br This VBsemi UTD351G-AE3-R-VB field effect transistor is suitable for a variety of power management and power control applications, especially in scenarios with high current requirements under medium voltage conditions.